In the given circuit,the current is $0.1 \ A$. The resistance of the $P-N$ junction is .... $\Omega$.

In a forward bias arrangement of a $p-n$ junction diode,the

Statement $I :$ When a $Si$ sample is doped with Boron,it becomes $P$-type and when doped by Arsenic it becomes $N$-type semiconductor such that $P$-type has excess holes and $N$-type has excess electrons.
Statement $II$ : When such $P$-type and $N$-type semiconductors are fused to make a junction,a current will automatically flow which can be detected with an externally connected ammeter.
In the light of above statements,choose the most appropriate answer from the options given below.

In the circuit shown for the given input voltage $V_i$, the maximum output voltage $V_0$ is

The dominant mechanisms for motion of charge carriers in forward and reverse biased silicon $P-N$ junctions are

The depletion region of a $p-n$ junction: