$A$ $p-n$ junction diode is connected to a battery of $emf$ $5.5\, V$ and external resistance $5.1\, k\Omega$. The barrier potential in the diode is $0.4\, V$. The current in the circuit is

The following table provides the set of values of $V$ and $I$ obtained for a given diode. Let the characteristics be nearly linear. Over this range,the forward and reverse bias resistance of the given diode respectively are:

Condition	$V$	$I$
Forward biasing	$2.0 \, V$	$60 \, mA$
Forward biasing	$2.4 \, V$	$80 \, mA$
Reverse biasing	$0 \, V$	$0 \, \mu A$
Reverse biasing	$-2 \, V$	$-0.25 \, \mu A$

In the figure,two $P-N$ junctions are connected. In which of the following connections will the voltages across the $P-N$ junctions be equal?

In a $p-n$ junction diode, the current $I$ can be expressed as $I=I_{0} \left[\exp \left(\frac{e V}{k_{B} T}\right)-1\right]$, where $I_{0}$ is the reverse saturation current, $V$ is the voltage across the diode (positive for forward bias, negative for reverse bias), $I$ is the current through the diode, $k_{B}$ is the Boltzmann constant $(8.6 \times 10^{-5} \; eV/K)$, and $T$ is the absolute temperature. If for a given diode $I_{0}=5 \times 10^{-12} \; A$ and $T=300 \; K$, then:
$(a)$ What will be the forward current at a forward voltage of $0.6 \; V$?
$(b)$ What will be the increase in the current if the voltage across the diode is increased to $0.7 \; V$?
$(c)$ What is the dynamic resistance?
$(d)$ What will be the current if reverse bias voltage changes from $1 \; V$ to $2 \; V$?

The increase in the width of the depletion region in a $p-n$ junction diode is due to

For an ideal diode,the current in the following arrangement is: