$A$ hole in a $P-$type semiconductor is

Which of the following statements is not true?

Doping of a semiconductor (with small impurity atoms) generally changes the resistivity as follows.

$A$ pure silicon crystal at temperature $300 \text{ K}$ has electron and hole concentration $(n_i) = 10^{16} \text{ per m}^3$ each. If $10^{21}$ phosphorus atoms $(n_D)$ are added per cubic metre, what is the new hole concentration in the silicon crystal?

$A$ silicon specimen is made into a $P$-type semiconductor by doping,on an average,one Indium atom per $5 \times 10^7$ silicon atoms. If the number density of atoms in the silicon specimen is $5 \times 10^{28} \text{ atoms}/m^3$,then the number of acceptor atoms in silicon per cubic centimetre will be:

$A$ silicon specimen is made into a $p$-type semiconductor by doping,on an average,one indium atom per $5 \times 10^7$ silicon atoms. If the number density of atoms in the silicon specimen is $5 \times 10^{28} \text{ atoms } m^{-3}$,then the number of acceptor atoms in silicon per cubic centimeter will be: