(A) The energy band gap $(E_g)$ is the energy difference between the conduction band and the valence band. For Carbon (diamond), the energy gap is app

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$(E_g)_C > (E_g)_{Si} > (E_g)_{Ge}$

(A) The energy band gap $(E_g)$ is the energy difference between the conduction band and the valence band. For Carbon (diamond), the energy gap is approximately $5.4 \text{ eV}$. For Silicon, the energy gap is approximately $1.1 \text{ eV}$. For Germanium, the energy gap is approximately $0.7 \text{ eV}$. Comparing these values, we find that $(E_g)_C > (E_g)_{Si} > (E_g)_{Ge}$. Therefore, the correct relationship is $(E_g)_C > (E_g)_{Si} > (E_g)_{Ge}$.

Class 12 Physics Semiconductor Electronics Classification of Materials and Energy Band Theory

Medium

Carbon, silicon, and germanium atoms have four valence electrons each. Their valence and conduction bands are separated by energy band gaps represented by $(E_g)_C$, $(E_g)_{Si}$, and $(E_g)_{Ge}$ respectively. Which one of the following relationships is true in their case?

A
$(E_g)_C > (E_g)_{Si} > (E_g)_{Ge}$
B
$(E_g)_C = (E_g)_{Si} = (E_g)_{Ge}$
C
$(E_g)_C < (E_g)_{Si} < (E_g)_{Ge}$
D
$(E_g)_C > (E_g)_{Si} < (E_g)_{Ge}$

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Semiconductor Electronics

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Classification of Materials and Energy Band Theory

Choose the correct statement.

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If $V_0$ is the volume of a standard unit cell of germanium crystal containing $N_0$ atoms, then the expression for the mass $m$ of a volume $V$ in terms of $V_0, N_0, M$ and $N_A$ is [here, $M$ is the molar mass of germanium and $N_A$ is the Avogadro's constant].

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Explain with a diagram how current flows due to electrons and holes in a pure semiconductor.

Medium

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Statement-$1$: The temperature coefficient of resistance of an intrinsic semiconductor is negative.
Statement-$2$: As temperature increases,more charge carriers are released into the conduction band.

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Assertion $(A)$: When a wire of aluminium and another wire of silicon are heated from room temperature to $80^{\circ} C$,the conductivity of aluminium decreases and that of silicon increases.
Reason $(R)$: Aluminium has a positive temperature coefficient of resistivity and silicon has a negative temperature coefficient of resistivity.

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Carbon, silicon, and germanium atoms have four valence electrons each. Their valence and conduction bands are separated by energy band gaps represented by $(E_g)_C$, $(E_g)_{Si}$, and $(E_g)_{Ge}$ respectively. Which one of the following relationships is true in their case?

Similar Questions

Choose the correct statement.

If $V_0$ is the volume of a standard unit cell of germanium crystal containing $N_0$ atoms, then the expression for the mass $m$ of a volume $V$ in terms of $V_0, N_0, M$ and $N_A$ is [here, $M$ is the molar mass of germanium and $N_A$ is the Avogadro's constant].

Explain with a diagram how current flows due to electrons and holes in a pure semiconductor.

Statement-$1$: The temperature coefficient of resistance of an intrinsic semiconductor is negative.Statement-$2$: As temperature increases,more charge carriers are released into the conduction band.

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Statement-$1$: The temperature coefficient of resistance of an intrinsic semiconductor is negative.
Statement-$2$: As temperature increases,more charge carriers are released into the conduction band.