The characteristic curve of an ideal $p-n$ junction diode is:

Three identical p-n junction diodes $D_1$, $D_2$ and $D_3$ are connected across a battery as shown in the figure. If the widths of the depletion regions of $D_1$, $D_2$ and $D_3$ are $W_1$, $W_2$ and $W_3$, respectively, then the correct option is:

The following table provides the set of values of $V$ and $I$ obtained for a given diode. Let the characteristics be nearly linear. Over this range,the forward and reverse bias resistance of the given diode respectively are:

Condition	$V$	$I$
Forward biasing	$2.0 \, V$	$60 \, mA$
Forward biasing	$2.4 \, V$	$80 \, mA$
Reverse biasing	$0 \, V$	$0 \, \mu A$
Reverse biasing	$-2 \, V$	$-0.25 \, \mu A$

$A$ junction diode has a resistance of $25 \Omega$ when forward biased and $2500 \Omega$ when reverse biased. The current in the diode, for the arrangement shown, will be

The circuit has two oppositely connected ideal diodes in parallel. What is the current flowing in the circuit (in $A$)?

$A$ crystal diode is a: