Consider a $p-n$ junction as a capacitor,formed with $p$ and $n$-materials acting as thin metal electrodes and depletion layer width acting as separation between them. Basing on this,assume that an $n-p-n$ transistor is working as an amplifier in $CE$ configuration. If $C_1$ and $C_2$ are the base-emitter and collector-emitter junction capacitances,then :

  • A
    $C_1 > C_2$
  • B
    $C_1 < C_2$
  • C
    $C_1 = C_2$
  • D
    $C_1 = C_2 = 0$

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