Consider the following statements $A$ and $B$ and identify the correct answer:
$A$. For a solar-cell,the $I-V$ characteristics lies in the $IV$ quadrant of the given graph.
$B$. In a reverse biased $pn$ junction diode,the current measured in $(\mu A)$ is due to majority charge carriers.

  • A
    $A$ is incorrect but $B$ is correct
  • B
    Both $A$ and $B$ are correct
  • C
    Both $A$ and $B$ are incorrect
  • D
    $A$ is correct but $B$ is incorrect

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What kind of $p-n$ junction diode does not require any kind of bias?

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$A$ family uses $8 \; kW$ of power.
$(a)$ Direct solar energy is incident on the horizontal surface at an average rate of $200 \; W$ per square meter. If $20 \%$ of this energy can be converted to useful electrical energy, how large an area is needed to supply $8 \; kW$?
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Why are $Si$ and $GaAs$ preferred materials for solar cells?

Assertion: $A$ $p-n$ junction with reverse bias can be used as a photo-diode to measure light intensity.
Reason: In a reverse bias condition,the current is small but is more sensitive to changes in incident light intensity.

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