Determine $V_{CE}$ in the following silicon-based transistor circuit. (in $V$)

On which of the following does the barrier potential of a $P-N$ junction diode $NOT$ depend?

For diode $D_1$,the forward bias resistance is $20 \ \Omega$ and the reverse bias resistance is $600 \ \Omega$. For diode $D_2$,the forward bias resistance is $30 \ \Omega$ and the reverse bias resistance is $200 \ \Omega$. Find the equivalent resistance between $A$ and $B$ if $(i)$ $A$ is at a higher potential,and $(ii)$ $B$ is at a higher potential.

Which of the following semiconductor diodes is reverse biased?

Two statements are given below:
$A$. When the forward bias voltage across a $p-n$ junction diode increases above a certain threshold voltage, the diode current increases significantly.
$B$. This current is called reverse saturation current.
Choose the correct answer from the options given below:

The current $I$ through the $10\, \Omega$ resistor in the given circuit is.......$mA$.