For a $p-n$ junction,the intensity of the electric field is $1 \times 10^{6} \text{ V/m}$ and the width of the depletion region is $5000 \text{ Å}$. The value of the potential barrier is $\dots \text{ V}$.

When a forward bias is applied to a $p-n$ junction,it

In the circuit shown in the figure,determine the voltage $V_0$ for the circuit network.

The following table provides the set of values of $V$ and $I$ obtained for a given diode. Let the characteristics be nearly linear. Over this range,the forward and reverse bias resistance of the given diode respectively are:

Condition	$V$	$I$
Forward biasing	$2.0 \, V$	$60 \, mA$
Forward biasing	$2.4 \, V$	$80 \, mA$
Reverse biasing	$0 \, V$	$0 \, \mu A$
Reverse biasing	$-2 \, V$	$-0.25 \, \mu A$

The current-voltage relation of a diode is given by $I = (e^{1000V/T} - 1) \; mA$,where the applied voltage $V$ is in volts and the temperature $T$ is in Kelvin. If a student makes an error of $\pm 0.01 \; V$ while measuring the voltage to obtain a current of $5 \; mA$ at $300 \; K$,what will be the error in the value of the current in $mA$?

The dominant mechanisms for motion of charge carriers in forward and reverse biased silicon $P-N$ junctions are