Given below are two statements:Statement I: I | vedclass

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(C) Statement $I$ is incorrect because in a transistor,the three regions have different doping levels. The emitter is heavily doped,the base is lightl

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Statement $I$ is incorrect but Statement $II$ is correct

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(C) Statement $I$ is incorrect because in a transistor,the three regions have different doping levels. The emitter is heavily doped,the base is lightly doped,and the collector is moderately doped.Statement $II$ is correct because the collector is made the largest (thickest) to dissipate the heat generated during operation,and the base is made very thin to allow the majority of charge carriers from the emitter to pass through to the collector.Therefore,Statement $I$ is incorrect and Statement $II$ is correct.

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