If {l_1}, {l_2}, {l_3} are the lengths of the | vedclass

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(D) In a transistor,the collector is designed to collect the majority of charge carriers coming from the emitter. This process generates significant h

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${l_3} > {l_1} > {l_2}$

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(D) In a transistor,the collector is designed to collect the majority of charge carriers coming from the emitter. This process generates significant heat,so the collector is made with the largest surface area to dissipate this heat effectively.The base is the middle region,which is made very thin and lightly doped to allow charge carriers to pass from the emitter to the collector with minimal recombination.The emitter is moderately sized and heavily doped to supply charge carriers.Comparing the sizes: The collector $(l_3)$ is the largest,the base $(l_2)$ is the smallest,and the emitter $(l_1)$ is of intermediate size.Therefore,the correct relation is ${l_3} > {l_1} > {l_2}$.

If ${l_1}, {l_2}, {l_3}$ are the lengths of the emitter,base,and collector of a transistor,respectively,then:

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