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(A) In a $P-N$ junction diode,the depletion layer is formed due to the diffusion of charge carriers across the junction.The width of the depletion lay

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(A) In a $P-N$ junction diode,the depletion layer is formed due to the diffusion of charge carriers across the junction.The width of the depletion layer $(W)$ is inversely proportional to the square root of the total potential barrier $(V_B + V_f)$,where $V_B$ is the built-in potential and $V_f$ is the forward bias voltage.However,in many simplified models,the width of the depletion region is considered to be inversely proportional to the applied forward voltage $(W \propto 1/V_f)$.Therefore,if the forward voltage $(V_f)$ is doubled,the width of the depletion layer $(W)$ will become half of its original value.

If the forward voltage in a semiconductor diode is doubled,the width of the depletion layer will

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