In a diode $AM$-detector,the output circuit consists of $R = 1 \, k\Omega$ and $C = 10 \, pF$. $A$ carrier signal of $100 \, kHz$ is to be detected. Is it good?

For the given circuit,find $V_{AB} = ......V$.

The forbidden energy gap of $Ge$ is $0.75 \ eV$. The maximum wavelength of incident photon radiation that can generate an electron-hole pair in a $Ge$ semiconductor is ........... $\mathring{A}$.

Depletion region in an unbiased semiconductor diode is a region consisting of

For diode $D_1$,the forward bias resistance is $20 \ \Omega$ and the reverse bias resistance is $600 \ \Omega$. For diode $D_2$,the forward bias resistance is $30 \ \Omega$ and the reverse bias resistance is $200 \ \Omega$. Find the equivalent resistance between $A$ and $B$ if $(i)$ $A$ is at a higher potential,and $(ii)$ $B$ is at a higher potential.

The curve between charge density and distance near a $P-N$ junction will be: