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(A) In the input characteristics of a common-emitter $(CE)$ transistor,the base current $I_B$ is plotted against the base-emitter voltage $V_{BE}$ for

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$V_{CE_1} > V_{CE_2}$

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(A) In the input characteristics of a common-emitter $(CE)$ transistor,the base current $I_B$ is plotted against the base-emitter voltage $V_{BE}$ for a constant collector-emitter voltage $V_{CE}$.As the collector-emitter voltage $V_{CE}$ increases,the depletion region width at the collector-base junction increases,which reduces the effective base width. This leads to a decrease in the recombination of charge carriers in the base region,causing the base current $I_B$ to decrease for a fixed $V_{BE}$.Therefore,for a given $V_{BE}$,a higher $V_{CE}$ results in a lower $I_B$.Looking at the graph,the curve for $V_{CE_2}$ is shifted to the left (higher $I_B$ for the same $V_{BE}$) compared to the curve for $V_{CE_1}$.This implies that $V_{CE_2}$ must be smaller than $V_{CE_1}$,i.e.,$V_{CE_2}  V_{CE_2}$.

In an experiment,the input characteristics are shown for a $CE$ configuration $n-p-n$ transistor for different output voltages. Based on the graph,which of the following is correct?

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