In an unbiased p-n junction,holes diffuse fro | vedclass

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(B) The diffusion of charge carriers across a junction occurs due to a concentration gradient,moving from a region of higher concentration to a region

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hole concentration in $p-$region is more as compared to $n-$region.

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(B) The diffusion of charge carriers across a junction occurs due to a concentration gradient,moving from a region of higher concentration to a region of lower concentration.In a $p-n$ junction,the $p-$region is doped with acceptor atoms,resulting in a high concentration of holes.Conversely,the $n-$region is doped with donor atoms,resulting in a low concentration of holes.Therefore,due to the concentration gradient,holes diffuse from the $p-$region to the $n-$region.

In an unbiased $p-n$ junction,holes diffuse from the $p-$region to $n-$region because

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