In the band structure of n-type semiconductor | vedclass

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(C) In an $n$-type semiconductor, pentavalent impurity atoms (like phosphorus, arsenic, etc.) are added to the intrinsic semiconductor. These impurity

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the band gap and are close to conduction band.

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(C) In an $n$-type semiconductor, pentavalent impurity atoms (like phosphorus, arsenic, etc.) are added to the intrinsic semiconductor. These impurity atoms are called donor atoms. Each donor atom provides an extra electron. These donated electrons occupy discrete energy levels known as donor energy levels $(E_D)$. These donor energy levels are located within the band gap, just below the conduction band edge $(E_C)$. Because they are very close to the conduction band, these electrons can easily be thermally excited into the conduction band at room temperature, contributing to electrical conductivity.

In the band structure of $n$-type semiconductor, the free electrons donated by impurity atoms occupy energy levels in

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