The $I-V$ characteristic of a $p-n$ junction diode is shown in the figure. Find the approximate dynamic resistance of the $p-n$ junction when a forward bias of $1 \text{ V}$ is applied. (in $\Omega$)

Refer to the circuit diagram given in the figure. Which of the following observations are correct?
$A.$ Total resistance of the circuit is $6 \ \Omega$.
$B.$ Current in the ammeter is $1 \ A$.
$C.$ Potential across $AB$ is $4 \ V$.
$D.$ Potential across $CD$ is $4 \ V$.
$E.$ Total resistance of the circuit is $8 \ \Omega$.
Choose the correct answer from the options given below:

Assertion: The value of current through the $p-n$ junction in the given figure will be $10\, mA$.
Reason: In the above figure,the $p-$side is at a higher potential than the $n-$side.

For the circuit shown in the figure,the equivalent resistance between points $A$ and $B$ for two cases $(i)$ $V_A > V_B$ and (ii) $V_B > V_A$ is $\qquad \Omega$ and $\qquad \Omega$ respectively. ($D_1$ and $D_2$ are ideal diodes)

To make a $PN$ junction conducting,

If the forward voltage in a diode is increased,the thickness of the depletion layer .......