The I-V characteristic of a P-N junction diod | vedclass

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(A) The dynamic resistance $r_f$ of a $P-N$ junction diode is defined as the ratio of the change in voltage to the change in current in the forward bi

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$2$

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(A) The dynamic resistance $r_f$ of a $P-N$ junction diode is defined as the ratio of the change in voltage to the change in current in the forward bias region.$r_f = \frac{\Delta V_f}{\Delta I_f}$From the given graph,at $V_f = 1\;V$,$I_f = 50\;mA$ and at $V_f = 1.1\;V$,$I_f = 100\;mA$.Therefore,$\Delta V_f = 1.1\;V - 1.0\;V = 0.1\;V$.And $\Delta I_f = 100\;mA - 50\;mA = 50\;mA = 50 	imes 10^{-3}\;A$.Now,substituting these values into the formula:$r_f = \frac{0.1}{50 	imes 10^{-3}} = \frac{0.1 	imes 1000}{50} = \frac{100}{50} = 2\;\Omega$.Thus,the approximate dynamic resistance is $2\;\Omega$.

The $I-V$ characteristic of a $P-N$ junction diode is shown in the figure. The approximate dynamic resistance of the $P-N$ junction when a forward bias of $1\;V$ is applied is.......$\Omega$.

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