The current in the following circuit is:

The characteristic graph of a diode at different temperatures is shown. What is the relationship between the temperatures?

Can we take one slab of $p-$type semiconductor and physically join it to another $n-$type semiconductor to get $p-n$ junction?

Assume that each diode as shown in the figure has a forward bias resistance of $50 \Omega$ and an infinite reverse bias resistance. The current through the $150 \Omega$ resistance is

The junction diode in the following circuit requires a minimum current of $1 \, mA$ to be above the knee point $(0.7 \, V)$ of its $I-V$ characteristic curve. The voltage across the diode is independent of current above the knee point. If $V_B = 5 \, V$,then the maximum value of $R$ so that the voltage is above the knee point will be:

When and why is a $p-n$ junction called forward biased? Describe the changes that occur under such bias.