The depletion layer in a silicon diode is $1 \, \mu m$ wide and the knee potential is $0.6 \, V$. The electric field in the depletion layer is:

$A$ $p-n$ junction diode can withstand up to $20 \, mA$ current under forward bias. The diode has a potential difference of $0.5 \, V$ across it, which is assumed to be independent of current. What is the maximum voltage of the battery used to forward bias the diode when a resistance of $125 \, \Omega$ is connected in series with it (in $V$)?

$A$ $P-N$ junction is a ............ .

For using a multimeter to identify a diode from electrical components,choose the correct statement about the diode from the following:

The following table provides the set of values of $V$ and $I$ obtained for a given diode. Let the characteristics be nearly linear. Over this range,the forward and reverse bias resistance of the given diode respectively are:

Condition	$V$	$I$
Forward biasing	$2.0 \, V$	$60 \, mA$
Forward biasing	$2.4 \, V$	$80 \, mA$
Reverse biasing	$0 \, V$	$0 \, \mu A$
Reverse biasing	$-2 \, V$	$-0.25 \, \mu A$

In the given figure,the voltage of point $A$ is ............ $V$.