The depletion layer in the p-n junction is ca | vedclass

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(B) When a $p-n$ junction is formed,the concentration gradient of charge carriers (holes in the $p$-region and electrons in the $n$-region) causes the

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diffusion of charge carriers

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(B) When a $p-n$ junction is formed,the concentration gradient of charge carriers (holes in the $p$-region and electrons in the $n$-region) causes them to diffuse across the junction.As electrons diffuse from the $n$-side to the $p$-side and holes diffuse from the $p$-side to the $n$-side,they recombine near the junction.This recombination leaves behind immobile ionized impurity atoms (negative ions on the $p$-side and positive ions on the $n$-side).These immobile ions create an electric field that opposes further diffusion,resulting in a region depleted of mobile charge carriers,known as the depletion layer.

The depletion layer in the $p-n$ junction is caused by

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