The part of a transistor which is heavily doped to produce a large number of majority carriers is

The output characteristics of an $n-p-n$ transistor represent, ($I_C =$ collector current, $V_{CE} =$ potential difference between collector and emitter, $I_B =$ base current, $V_{BB} =$ voltage given to base, $V_{BE} =$ the potential difference between base and emitter)

$A$ $CE$ amplifier has a voltage gain of $G$. The transistor used has a transconductance of $0.03 \ mho$ and a current gain of $25$. If this transistor is replaced by another transistor with a transconductance of $0.02 \ mho$ and a current gain of $20$,the new voltage gain will be ........

$A$ common emitter transistor amplifier has a current gain of $50$. If the load resistance is $9 \, k\Omega$ and the input resistance is $500 \, \Omega$,the voltage gain of the amplifier will be:

Consider the circuit arrangement shown in figure $(1)$ for studying input and output characteristics of an $n-p-n$ transistor in $CE$ configuration. Select the values of $R_B$ and $R_C$ for a transistor whose $V_{BE} = 0.7 \, V$, so that the transistor is operating at point $Q$ as shown in the characteristics shown in figure $(2)$. Given that the input impedance of the transistor is very small and $V_{CC} = V_{BB} = 16 \, V$, also find the voltage gain and power gain of the circuit making appropriate assumptions.

An $n-p-n$ transistor power amplifier in $C-E$ configuration gives