When a p-n junction diode is reverse biased,t | vedclass

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(A) In a $p-n$ junction diode,when reverse bias is applied,the positive terminal of the battery is connected to the $n$-region and the negative termin

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increase and it will offer more resistance.

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(A) In a $p-n$ junction diode,when reverse bias is applied,the positive terminal of the battery is connected to the $n$-region and the negative terminal to the $p$-region.This causes the majority charge carriers (electrons in $n$-region and holes in $p$-region) to move away from the junction.As a result,the depletion layer widens,and the barrier potential increases.Due to the increased width of the depletion layer,the flow of majority charge carriers is blocked,which means the diode offers high resistance to the current.

When a $p-n$ junction diode is reverse biased,then the width of the depletion layer will

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