Which of the following statements are not correct?
$(A)$ Diode is a combination of $n$-type and $p$-type semiconductors.
$(B)$ Silicon or germanium is electron rich impurity.
$(C)$ Phosphorus and arsenic are electron deficient impurities.
$(D)$ Schottky defect decreases the density of the crystal.

  • A
    $B$,$C$
  • B
    $A$,$D$
  • C
    $C$,$D$
  • D
    $A$,$C$

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Non-stoichiometric defects do not include which of the following?

In an ionic crystal,$F$-centers are.....

Analysis shows that nickel oxide has the formula $Ni_{0.98}O_{1.00}$. The fractions of $Ni^{2+}$ and $Ni^{3+}$ ions in the crystal are ......

When $Fe_{0.93}O$ is heated in the presence of oxygen,it converts to $Fe_2O_3$. The number of correct statement$(s)$ from the following is:
$A.$ The equivalent weight of $Fe_{0.93}O$ is $\frac{\text{Molecular weight}}{0.79}$.
$B.$ The number of moles of $Fe^{2+}$ and $Fe^{3+}$ in $1 \text{ mole}$ of $Fe_{0.93}O$ is $0.79$ and $0.14$ respectively.
$C.$ $Fe_{0.93}O$ is metal deficient with a lattice comprising of a cubic closed-packed arrangement of $O^{2-}$ ions.
$D.$ The $\%$ composition of $Fe^{2+}$ and $Fe^{3+}$ in $Fe_{0.93}O$ is $85\%$ and $15\%$ respectively.

Explain metal deficiency defect.

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