Which of the following statements is true for | vedclass

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(A) In an $N$-type semiconductor,pentavalent impurity atoms are added to the intrinsic semiconductor. These impurity atoms provide extra electrons tha

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The donor level lies closely below the bottom of the conduction band.

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(A) In an $N$-type semiconductor,pentavalent impurity atoms are added to the intrinsic semiconductor. These impurity atoms provide extra electrons that are loosely bound. The energy levels of these extra electrons are known as donor energy levels. These donor energy levels are located just below the conduction band,typically about $0.01 \, eV$ for Germanium $(Ge)$ and $0.05 \, eV$ for Silicon $(Si)$. Because this energy gap is very small,thermal energy at room temperature is sufficient to excite these electrons into the conduction band,making them available for conduction.

Which of the following statements is true for an $N$-type semiconductor?

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