$P$-type semiconductor has acceptor levels $57 \, meV$ above the valence band. The maximum wavelength of light required to create a hole is (Planck's constant $h = 6.6 \times 10^{-34} \, J-s$)

  • A
    $57 \, \mathring{A}$
  • B
    $57 \times 10^{-3} \, \mathring{A}$
  • C
    $217100 \, \mathring{A}$
  • D
    $11.61 \times 10^{-33} \, \mathring{A}$

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$A$ hole in a $P-$type semiconductor is

What are $n$-type and $p$-type semiconductors? Name the majority and minority charge carriers in each.

Explain the recombination coefficient of an intrinsic semiconductor and derive the relation $n_i^2 = n_e n_h$.

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Assertion: The number of electrons in a $p-$type silicon semiconductor is less than the number of electrons in a pure silicon semiconductor at room temperature.
Reason: It is due to the law of mass action.

The electron concentration in an $n$-type semiconductor is the same as the hole concentration in a $p$-type semiconductor. An external electric field is applied across each of them. Compare the currents in them.

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