$A$ photodiode is a device

Statement $-I$: $A$ photodiode operates in reverse bias.
Statement $-II$: The fractional change due to the photo-effects on the minority carrier dominated reverse bias current is more easily measurable than the fractional change in the forward bias current.

The photodiode is made of a material with a band gap of $2.0\, eV$. The minimum frequency of the radiation that can be absorbed by the material is nearly

In a light emitting diode $(LED)$,light is emitted due to:

The given characteristic curve is related to which electronic device?

Consider the following statements $A$ and $B$ and identify the correct answer:
$A$. For a solar-cell,the $I-V$ characteristics lies in the $IV$ quadrant of the given graph.
$B$. In a reverse biased $pn$ junction diode,the current measured in $(\mu A)$ is due to majority charge carriers.