In an $N$-type semiconductor,where are the donor energy levels $E_D$ located?
- AThe donor energy levels $E_D$ are located very close to the valence band energy level $E_V$.
- BThe donor energy levels $E_D$ are located very close to the conduction band energy level $E_C$.
- CThe donor energy levels $E_D$ are located exactly in the middle of the $E_C$ and $E_V$ energy levels.
- DThe donor energy levels $E_D$ are located close to both $E_C$ and $E_V$ energy levels.
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$(B)$ The dopant is a pentavalent atom.
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$(B)$ The dopant is a pentavalent atom.
$(C)$ $n_e n_h \neq n_i^2$ (where $n_i$ is the number of electrons or holes in the semiconductor when it is in its intrinsic form).
$(D)$ $n_e n_h \geq n_i^2$.
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