When a small amount of antimony impurity is added to a germanium crystal,what happens?

Suppose an $n$-type wafer is created by doping $Si$ crystal having $5 \times 10^{28} \text{ atoms/m}^3$ with $1 \text{ ppm}$ concentration of $As$. On the surface,$200 \text{ ppm}$ Boron is added to create a $p$-region in this wafer. Considering $n_i = 1.5 \times 10^{16} \text{ m}^{-3}$,$(i)$ Calculate the densities of the charge carriers in the $n$ and $p$ regions. $(ii)$ Comment on which charge carriers would contribute largely to the reverse saturation current when the diode is reverse biased.

In a $P$-type semiconductor, the acceptor energy level $E_A$ is located $57 \, meV$ above the valence band. The maximum wavelength required to create a hole is ....... $\mathring{A}$. (Given: $h = 6.6 \times 10^{-34} \, J \, s$, $c = 3 \times 10^8 \, m/s$, $1 \, eV = 1.6 \times 10^{-19} \, J$)

Minority carriers in a $p$-type semiconductor are

In $N$-type semiconductors,the majority charge carriers are

The impurity atoms which are mixed with pure silicon to make a $P$-type semiconductor are those of: