When a $P-N$ junction is in forward bias,what happens to the depletion region and the potential barrier?

  • A
    The depletion region decreases and the potential barrier height increases.
  • B
    The depletion region widens and the potential barrier height decreases.
  • C
    Both the depletion region and the potential barrier height decrease.
  • D
    Both the depletion region and the potential barrier height increase.

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Similar Questions

Consider a $p-n$ junction as a capacitor, formed with $p$ and $n$-materials acting as thin metal electrodes and depletion layer width acting as separation between them. Basing on this, assume that an $n-p-n$ transistor is working as an amplifier in $CE$ configuration. If $C_1$ and $C_2$ are the base-emitter and collector-emitter junction capacitances, then :

Which one of the following represents a forward-biased diode?

In a semiconductor diode,the reverse biased current is due to the drift of free electrons and holes caused by:

The following table provides the set of values of $V$ and $I$ obtained for a given diode. Let the characteristics be nearly linear. Over this range,the forward and reverse bias resistance of the given diode respectively are:
Condition $V$ $I$
Forward biasing $2.0 \, V$ $60 \, mA$
Forward biasing $2.4 \, V$ $80 \, mA$
Reverse biasing $0 \, V$ $0 \, \mu A$
Reverse biasing $-2 \, V$ $-0.25 \, \mu A$

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$A$ $p-n$ junction diode is reverse biased with a voltage of $8 \, V$. If the resistance of the diode is $4 \times 10^7 \, \Omega$, then the reverse saturation current is: (in $ \, \mu A$)

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