$A$ common emitter amplifier has a voltage gain of $50$, an input resistance of $100 \ \Omega$, and an output resistance of $200 \ \Omega$. What is the power gain of the amplifier?

The output characteristics of an $n-p-n$ transistor represent, ($I_C =$ collector current, $V_{CE} =$ potential difference between collector and emitter, $I_B =$ base current, $V_{BB} =$ voltage given to base, $V_{BE} =$ the potential difference between base and emitter)

In a $p-n-p$ transistor, the current carriers are

For a transistor in the active region:
$(a)$ Base,emitter,and collector regions should have similar size and doping concentrations.
$(b)$ The base region must be very thin and lightly doped.
$(c)$ The emitter-base junction is forward-biased and the base-collector junction is reverse-biased.
$(d)$ Both the emitter-base junction and the base-collector junction are forward-biased.
Which one of the following pairs of statements is correct?

The transistors provide good power amplification when they are used in

In an $NPN$ transistor circuit,the collector current is $10 \,mA$. If $90\%$ of the electrons emitted reach the collector,the emitter current $(i_E)$ and base current $(i_B)$ are given by