In a $P-N$ junction,the thickness of the depletion layer is $10^{-6} \ m$ and the potential barrier is $0.1 \ V$. The electric field in $V/m$ is:

Assuming that the junction diode is ideal, the current in the arrangement shown in the circuit diagram is (in $ mA$)

In the following figure,the diodes which are forward biased,are

Which of the following is correct with respect to the following statements? Due to diffusion of electrons from $n$ to $p$-side:
$I$. electrons are accumulated in the depletion region.
$II$. electron drift current is from $p$-side to $n$-side.
$III$. an ionised donor is left in the $n$-region.
$IV$. electrons of $n$-side come to $p$-side and electron-hole combination takes place in $p$-side.
Select the correct option from the following.

$A$ $P-N$ junction is formed using $Si$ material. What is the approximate height of the depletion barrier in $V$?

The forbidden energy gap of $Ge$ is $0.75 \ eV$. The maximum wavelength of incident photon radiation that can generate an electron-hole pair in a $Ge$ semiconductor is ........... $\mathring{A}$.