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(C) The potential barrier (or depletion barrier) for a $P-N$ junction depends on the semiconductor material used.For Silicon $(Si)$,the energy gap is

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$0.7$

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(C) The potential barrier (or depletion barrier) for a $P-N$ junction depends on the semiconductor material used.For Silicon $(Si)$,the energy gap is approximately $1.1 \ eV$,and the potential barrier height is typically around $0.7 \ V$ at room temperature.For Germanium $(Ge)$,the potential barrier height is typically around $0.3 \ V$.Therefore,for a $Si$ $P-N$ junction,the correct value is $0.7 \ V$.

$A$ $P-N$ junction is formed using $Si$ material. What is the approximate height of the depletion barrier in $V$?

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