For pure Ge,the intrinsic carrier density is | vedclass

Name: Exam Paper Generator | JEE NEET Paper Generator | Vedclass
Brand: Vedclass
Rating: 5 (35 reviews)

Question

(A) The law of mass action for semiconductors states that $n_e \cdot n_h = n_i^2$,where $n_e$ is the electron density,$n_h$ is the hole density,and $n

Vedclass · Accepted Answer

$10^{15}$

Vedclass · Answer

(A) The law of mass action for semiconductors states that $n_e \cdot n_h = n_i^2$,where $n_e$ is the electron density,$n_h$ is the hole density,and $n_i$ is the intrinsic carrier density.Given: $n_i = 10^{19} \ m^{-3}$.When donor impurity is added,the electron density $n_e$ becomes approximately equal to the donor impurity density $N_D = 10^{23} \ m^{-3}$.Using the formula: $n_h = \frac{n_i^2}{n_e} = \frac{(10^{19})^2}{10^{23}}$.$n_h = \frac{10^{38}}{10^{23}} = 10^{15} \ m^{-3}$.

For pure $Ge$,the intrinsic carrier density is $10^{19} \ m^{-3}$. If donor impurity is added with a density of $10^{23} \ m^{-3}$,what will be the hole density (in $m^{-3}$)?

Similar Questions

The mobility of free electrons is greater than that of free holes because

How is electric conduction produced in an intrinsic semiconductor?

The impurity atoms which are mixed with pure silicon to make a $P$-type semiconductor are those of:

In a semiconductor,the ratio of the number of electrons to the number of holes is $7/5$ and the ratio of their currents is $7/4$. What is the ratio of their drift velocities?

In a $P$-type semiconductor,there is

Vedclass Test Series

Exam Paper Generator

Online Exam Module