$A$ $P-$ type semiconductor can be obtained by adding

The typical ionisation energy of a donor in silicon is.....$eV$

If $n_e$ and $n_h$ are electron and hole concentrations in an extrinsic semiconductor and $n_i$ is the intrinsic carrier concentration, then:

In extrinsic $P$ and $N$-type semiconductor materials,the ratio of the impurity atoms to the pure semiconductor atoms is about

In $p-$type semiconductor,the majority charge carriers are

$A$ donor atom in a semiconductor has a loosely bound electron. The orbit of this electron is considerably affected by the semiconductor material but behaves in many ways like an electron orbiting a hydrogen nucleus. Given that the electron has an effective mass of $0.07 \, m_e$,where $m_e$ is the mass of the free electron,and the space in which it moves has a permittivity of $13 \, \varepsilon_0$,then the radius of the electron's lowermost energy orbit will be close to ................. $\mathring{A}$ (take the Bohr radius of the hydrogen atom as $0.53 \mathring{A}$).