If $n_e$ and $n_h$ are electron and hole concentrations in an extrinsic semiconductor and $n_i$ is the intrinsic carrier concentration, then:

Donor type impurity is found in

In $N$-type semiconductors,the majority charge carriers are

$A$ silicon specimen is made into a $P$-type semiconductor by doping,on an average,one Indium atom per $5 \times 10^7$ silicon atoms. If the number density of atoms in the silicon specimen is $5 \times 10^{28} \text{ atoms}/m^3$,then the number of acceptor atoms in silicon per cubic centimetre will be:

In an intrinsic semiconductor,the density of conduction electrons is $7.07 \times 10^{15} \, m^{-3}$. When it is doped with indium,the density of holes becomes $5 \times 10^{22} \, m^{-3}$. Find the density of conduction electrons in the doped semiconductor.

Write four points in distinguishing between $p$-type semiconductor and $n$-type semiconductor.