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(N/A) $p$-type semiconductor$n$-type semiconductor$(1)$ It is formed by doping intrinsic semiconductor with trivalent impurity atoms (e.g.,Aluminium,G

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(N/A) $p$-type semiconductor$n$-type semiconductor$(1)$ It is formed by doping intrinsic semiconductor with trivalent impurity atoms (e.g.,Aluminium,Gallium,or Indium).$(1)$ It is formed by doping intrinsic semiconductor with pentavalent impurity atoms (e.g.,Phosphorus,Antimony,or Arsenic).$(2)$ Majority charge carriers are holes and minority charge carriers are electrons.$(2)$ Majority charge carriers are electrons and minority charge carriers are holes.$(3)$ Conduction is mainly due to the movement of holes.$(3)$ Conduction is mainly due to the movement of electrons.$(4)$ The number density of holes is greater than the number density of electrons $(n_h > n_e)$.$(4)$ The number density of electrons is greater than the number density of holes $(n_e > n_h)$.

Write four points in distinguishing between $p$-type semiconductor and $n$-type semiconductor.

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$p$-type semiconductor	$n$-type semiconductor
$(1)$ It is formed by doping intrinsic semiconductor with trivalent impurity atoms (e.g.,Aluminium,Gallium,or Indium).	$(1)$ It is formed by doping intrinsic semiconductor with pentavalent impurity atoms (e.g.,Phosphorus,Antimony,or Arsenic).
$(2)$ Majority charge carriers are holes and minority charge carriers are electrons.	$(2)$ Majority charge carriers are electrons and minority charge carriers are holes.
$(3)$ Conduction is mainly due to the movement of holes.	$(3)$ Conduction is mainly due to the movement of electrons.
$(4)$ The number density of holes is greater than the number density of electrons $(n_h > n_e)$.	$(4)$ The number density of electrons is greater than the number density of holes $(n_e > n_h)$.