The temperature $(T)$ dependence of resistivity $(\rho)$ of a semiconductor is represented by

Pure $Si$ at $500\,K$ has equal number of electron $(n_e)$ and hole $(n_h)$ concentrations of $1.5 \times 10^{16}\,m^{-3}$. Doping by indium increases $n_h$ to $4.5 \times 10^{22}\,m^{-3}$. The doped semiconductor is of

For extrinsic semiconductors,when the doping level is increased:

When an $N-$type semiconductor is heated,what happens to the charge carriers?

The contribution in the total current flowing through a semiconductor due to electrons and holes are $\frac{3}{4}$ and $\frac{1}{4}$ respectively. If the drift velocity of electrons is $\frac{5}{2}$ times that of holes at this temperature,then the ratio of concentration of electrons and holes is

$A$ crystal of intrinsic silicon at room temperature has a carrier concentration of $1.6 \times 10^{16} / m^3$. If the donor concentration level is $4.8 \times 10^{20} / m^3$, then the concentration of holes in the semiconductor is