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(A) donor impurity atom provides an extra electron to the semiconductor lattice.When a donor impurity is added, the number of free electrons in the co

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the hole concentration decreases and electron concentration increases

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(A) donor impurity atom provides an extra electron to the semiconductor lattice.When a donor impurity is added, the number of free electrons in the conduction band increases significantly.According to the law of mass action, $n_e \cdot n_h = n_i^2$, where $n_e$ is the electron concentration, $n_h$ is the hole concentration, and $n_i$ is the intrinsic carrier concentration.Since $n_e$ increases, the hole concentration $n_h$ must decrease to maintain the product $n_i^2$ as a constant at a given temperature.Therefore, the electron concentration increases and the hole concentration decreases.Thus, option $A$ is the correct answer.

When a semiconductor is doped with donor impurity,

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