Donor type impurity is found in

$A$ $N-$ type semiconductor is

In pure $Si$ at $300 \ K$,the concentration of electrons $(n_e)$ and holes $(n_h)$ is equal and is $1.5 \times 10^{16} \ m^{-3}$. If the concentration of holes $(n_h)$ increases to $3 \times 10^{22} \ m^{-3}$ after doping with Indium,calculate the concentration of electrons $(n_e)$ in the doped $Si$.

The rate of recombination or generation of charge carriers in a semiconductor is governed by the law$(s)$ of:

When a battery is connected to a $P$-type semiconductor with a metallic wire,the current in the semiconductor (predominantly),inside the metallic wire,and inside the battery is due to which charge carriers respectively?

In $n$-type semiconductor,electrons are majority charge carriers,but it does not show any negative charge. The reason is: