In pure Si at 300 K,the concentration of ele | vedclass

Name: Exam Paper Generator | JEE NEET Paper Generator | Vedclass
Brand: Vedclass
Rating: 5 (35 reviews)

Question

(B) For a semiconductor in thermal equilibrium,the law of mass action states that $n_e n_h = n_i^2$,where $n_i$ is the intrinsic carrier concentration

Vedclass · Accepted Answer

$7.5 	imes 10^9 \ m^{-3}$

Vedclass · Answer

(B) For a semiconductor in thermal equilibrium,the law of mass action states that $n_e n_h = n_i^2$,where $n_i$ is the intrinsic carrier concentration.Given,$n_i = 1.5 	imes 10^{16} \ m^{-3}$ and the new hole concentration $n_h = 3 	imes 10^{22} \ m^{-3}$.Substituting these values into the formula:$n_e = \frac{n_i^2}{n_h}$$n_e = \frac{(1.5 	imes 10^{16})^2}{3 	imes 10^{22}}$$n_e = \frac{2.25 	imes 10^{32}}{3 	imes 10^{22}}$$n_e = 0.75 	imes 10^{10} \ m^{-3} = 7.5 	imes 10^9 \ m^{-3}$.

Similar Questions

What are impure semiconductors,doping,and dopants?

When the conductivity of a semiconductor is only due to breaking of covalent bonds, the semiconductor is called

The width of the forbidden gap in a silicon crystal is $1.1 \, eV$. When the crystal is converted into an $N$-type semiconductor,the distance of the Fermi level from the conduction band is:

$A$ $P$-type semiconductor has acceptor levels $57 \; meV$ above the valence band. The maximum wavelength of light required to create a hole is (Planck's constant $h = 6.6 \times 10^{-34} \; J \cdot s$, speed of light $c = 3 \times 10^8 \; m/s$)

In an $N$-type semiconductor,where are the donor energy levels $E_D$ located?

Vedclass Test Series

Exam Paper Generator

Online Exam Module