The rate of recombination or generation of charge carriers in a semiconductor is governed by the law$(s)$ of:

In a semiconductor,the concentrations of electrons and holes are $8 \times 10^{18} \, m^{-3}$ and $5 \times 10^{18} \, m^{-3}$ respectively. If the mobilities of electrons and holes are $2.3 \, m^2/V \cdot s$ and $0.01 \, m^2/V \cdot s$ respectively,then the semiconductor is:

In a pure silicon $(n_i = 10^{16}/m^3)$ crystal at $300\, K$,$10^{21}$ atoms of phosphorus are added per cubic meter. The new hole concentration will be

Write four points in distinguishing between $p$-type semiconductor and $n$-type semiconductor.

Pure silicon at $300 \ K$ has equal electron and hole concentration of $1.5 \times 10^{16} \ m^{-3}$. If the hole concentration increases to $3 \times 10^{22} \ m^{-3}$,then the electron concentration in the silicon is

Let $n_e$ be the number density of electrons and $v_d$ be the drift velocity in a semiconductor. When the temperature is increased: