In a pure silicon $(n_i = 10^{16}/m^3)$ crystal at $300\, K$,$10^{21}$ atoms of phosphorus are added per cubic meter. The new hole concentration will be

What is the conductivity of a pure silicon crystal at $300 \ K$? The number of electron-hole pairs per $cm^3$ is $1.072 \times 10^{10}$. Given $\mu_n = 1350 \ cm^2/V \cdot s$ and $\mu_p = 480 \ cm^2/V \cdot s$.

Minority carriers in a $p$-type semiconductor are

Which of the following statements is correct for an $n$-type semiconductor?

The concentration of electrons in an intrinsic semiconductor is $6 \times 10^{15} \,m^{-3}$. On doping with an impurity, the electron concentration increases to $4 \times 10^{22} \,m^{-3}$. In thermal equilibrium, the concentration of the holes in the doped semiconductor is:

In a semiconductor,the ratio of the number of electrons to the number of holes is $7/5$ and the ratio of their currents is $7/4$. What is the ratio of their drift velocities?