Pure silicon at 300 K has equal electron and | vedclass

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(D) For an intrinsic semiconductor,the law of mass action states that $n_e n_h = n_i^2$.Given,$n_e = n_h = n_i = 1.5 	imes 10^{16} \ m^{-3}$.Therefor

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$7.5 	imes 10^9 \ m^{-3}$

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(D) For an intrinsic semiconductor,the law of mass action states that $n_e n_h = n_i^2$.Given,$n_e = n_h = n_i = 1.5 	imes 10^{16} \ m^{-3}$.Therefore,$n_i^2 = (1.5 	imes 10^{16})^2 = 2.25 	imes 10^{32} \ m^{-6}$.When the hole concentration is increased to $n_h' = 3 	imes 10^{22} \ m^{-3}$,the new electron concentration $n_e'$ is given by:$n_e' = \frac{n_i^2}{n_h'} = \frac{2.25 	imes 10^{32}}{3 	imes 10^{22}}$.$n_e' = 0.75 	imes 10^{10} \ m^{-3} = 7.5 	imes 10^9 \ m^{-3}$.

Pure silicon at $300 \ K$ has equal electron and hole concentration of $1.5 \times 10^{16} \ m^{-3}$. If the hole concentration increases to $3 \times 10^{22} \ m^{-3}$,then the electron concentration in the silicon is

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