Let $n_e$ be the number density of electrons and $v_d$ be the drift velocity in a semiconductor. When the temperature is increased:

Doping of intrinsic semiconductor is done:

When $Ge$ crystals are doped with phosphorus atoms,then it becomes

Indium impurity in germanium makes

$A$ potential difference of $2\,V$ is applied between the opposite faces of a $Ge$ crystal plate of area $1\,cm^{2}$ and thickness $0.5\,mm$. If the concentration of electrons in $Ge$ is $2 \times 10^{19}/m^{3}$ and mobilities of electrons and holes are $0.36\,m^{2}/(V\cdot s)$ and $0.14\,m^{2}/(V\cdot s)$ respectively,then the current flowing through the plate will be... (in $,A$)

In a semiconductor,the intrinsic carrier concentration of electrons and holes is $6 \times 10^8 \ m^{-3}$. After doping with some impurity,the electron concentration increases to $9 \times 10^{12} \ m^{-3}$. Find the new hole concentration.