When $Ge$ crystals are doped with phosphorus atoms,then it becomes

At room temperature,a $p$-type semiconductor has

When a semiconductor is doped with donor impurity,

$A$ semiconductor is placed in an electric field. Let the number density of charge carriers be $n$ and the average drift velocity be $v$. If the temperature is increased,then:

Pure $Si$ at $500\, K$ has equal number of electron $(n_e)$ and hole $(n_h)$ concentrations of $1.5 \times 10^{16} \, m^{-3}$. Doping by indium increases $n_h$ to $4.5 \times 10^{22} \, m^{-3}$. The doped semiconductor is of:

When the conductivity of a semiconductor is only due to breaking of covalent bonds, the semiconductor is called