$A$ photodetector is made from a semiconductor $In_{0.53}Ga_{0.47}As$ with $E_g = 0.73 \, eV$. What is the maximum wavelength,which it can detect in $nm$?

Conductivity of a photodiode starts changing only if the wavelength of incident light is < 660 \, nm. The band gap of the photodiode is found to be $\left(\frac{x}{8}\right) eV$. The value of $x$ is: (Given, $h=6.6 \times 10^{-34} \, Js, c=3 \times 10^8 \, m/s, e=1.6 \times 10^{-19} \, C$)

$A$ $p-n$ photodiode is made of a material with a band gap of $2.0\, eV$. The minimum frequency of the radiation that can be absorbed by the material is nearly:

In optical fiber communication, an $APD$ semiconductor is used for:

$A$ light emitting diode $(LED)$ is fabricated using $GaAs$ semiconducting material whose band gap is $1.42 \,eV$. The wavelength of light emitted from the $LED$ is: (in $\,nm$)

For the emission of light,a light emitting diode $(LED)$ is: