$A$ $p-n$ photodiode is made of a material with a band gap of $2.0\, eV$. The minimum frequency of the radiation that can be absorbed by the material is nearly:

In a light emitting diode $(LED)$,light is emitted due to:

Given below are two statements: one is labeled as Assertion $A$ and the other is labeled as Reason $R$.
Assertion $A:$ Photodiodes are used in forward bias usually for measuring the light intensity.
Reason $R:$ For a $p-n$ junction diode, at applied voltage $V$, the current in the forward bias is more than the current in the reverse bias for $|V_z| > |V| \geq V_0$, where $V_0$ is the threshold voltage and $V_z$ is the breakdown voltage.
In the light of the above statements, choose the correct answer from the options given below.

The $I-V$ characteristics of a photodiode for different illumination intensities $I_1, I_2, I_3$ and $I_4$ are shown in the figure. Which of the following represents the maximum intensity?

Which semiconductor device converts electrical energy into light?

Consider the following statements $:$
$A.$ The junction area of a solar cell is made very large compared to a photodiode.
$B.$ Solar cells are not connected with any external bias.
$C.$ $\text{LED}$ is made of heavily doped $p-n$ junction.
$D.$ Increase of forward current results in continuous increase of $\text{LED}$ light intensity up to a saturation point.
$E.$ $\text{LED}$ must be connected in forward bias for the emission of light.
Which of the following statements are correct?