Consider the following statements :A. The jun | vedclass

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(D) Statement $A$ is incorrect because the junction area of a solar cell is made large to collect more light,whereas a photodiode has a small area for

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$B, E$ Only

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(D) Statement $A$ is incorrect because the junction area of a solar cell is made large to collect more light,whereas a photodiode has a small area for fast response.Statement $B$ is correct because a solar cell operates in the photovoltaic mode without any external bias.Statement $C$ is incorrect because an $	ext{LED}$ is made of a heavily doped $p-n$ junction to facilitate efficient carrier injection.Statement $D$ is incorrect because the light intensity of an $	ext{LED}$ increases with forward current only up to a certain limit,after which it saturates.Statement $E$ is correct because an $	ext{LED}$ emits light only when it is forward-biased,which causes the recombination of electrons and holes at the junction.Therefore,statements $B$ and $E$ are correct.

Similar Questions

$A$ $p-n$ junction is fabricated from a semiconductor with a band gap of $2.8 \ eV$. What approximate wavelength can it $NOT$ detect (in $nm$)?
[Use $h = 6 \times 10^{-34} \ J \cdot s$ and $c = 3 \times 10^8 \ m/s$]

$A$ $p-n$ photodiode is fabricated from a semiconductor with a band gap of $2.5 \, eV$. It can detect a signal of wavelength:

$A$ photo cell is a device used to:

Which one of the following statements is '$WRONG$' regarding $LED$?

Select the correct statement.

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