$A$ semiconductor has electron and hole mobilities $\mu_{n}$ and $\mu_{p}$ respectively. If its intrinsic carrier density is $n_{i}$,what will be the value of hole concentration $p$ for which the conductivity will be minimum at a given temperature?

  • A
    $n_{i} \sqrt{\frac{\mu_{n}}{\mu_{p}}}$
  • B
    $n_{i} \sqrt{\frac{\mu_{p}}{\mu_{n}}}$
  • C
    $n_{i} \frac{\mu_{n}}{\mu_{p}}$
  • D
    $n_{i} \frac{\mu_{p}}{\mu_{n}}$

Explore More

Similar Questions

If the number of holes and electrons are represented by $n_h$ and $n_e$ respectively,then which of the following is correct for an intrinsic semiconductor?

Which of the following statements is true?

In extrinsic $P$ and $N$-type semiconductor materials,the ratio of the impurity atoms to the pure semiconductor atoms is about

In $n$-type semiconductor,electrons are majority charge carriers,but it does not show any negative charge. The reason is:

Doping of intrinsic semiconductor is done:

Vedclass Products

For Students

Vedclass Test Series

Mock tests in real JEE/NEET style with performance analysis. 5-day free trial.

Start Free Trial
For Teachers

Exam Paper Generator

Generate Set A/B/C/D exam papers from 7.5L+ questions in 2 minutes. 3 chapters free.

Try Free
For Institutes

Online Exam Module

Live online exams with unlimited students, 360° analytics & white-label branding.

See Demo